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      NSR0530P2T5G http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25 °C R P JA D 520 190 °C/W mW Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25 °C R P JA D 175 570 °C/W mW Junction and Storage Temperature Range TJ, Tstg -55 to +125 °C 1. Mounted onto a 4 in square FR-4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR-4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage (VR = 10 V) (VR = 30 V) IR 1.4 24 10 200 A Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 500 mA) VF 0.28 0.37 0.52 0.37 0.46 0.62 V Total Capacitance (VR = 1.0 V, f = 1 MHz) CT 10 pF Figure 1. Forward Voltage Figure 2. Leakage Current VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) 0.6 0.4 0.3 0.1 0 0.001 0.01 0.1 1 10 100 1000 35 30 25 20 15 10 5 0 0.001 0.01 0.1 10 1,000,000 Figure 3. Total Capacitance VR, REVERSE VOLTAGE (V) 25 3530 20 15 10 5 0 0 2 4 10 14 20 I F , FORWARD CURRENT (mA) I r , REVERSE CURRENT ( A) C T , TOTAL CAPACITANCE (pF) 0.2 125°C -40°C 85°C 25°C 125°C -40°C 85°C 25°C 1 TA = 25°C 0.5 10,000 100 1000 10,000 100,000 6 8 12 16 18 |